© 2007 Fairchild Semiconductor Corporation

www.fairchildsemi.com

FJB102 Rev. 1.1.0

3

Typical Performance Characteristics

Figure 1. Static Characteristic

Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage and

Base-Emitter Saturation Voltage

Figure 4. Collector Output Capacitance

Figure 5. Forward Biased Safe Operating Area

Figure 6. Power Derating

012

345

0

1

2

3

4

5

I

B

= 1mA

I

B

= 300µA

I

B

= 200µA

I

B

= 100µA

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0.1

1

10

100

1k

10k

V

CE

= 4V

I

C

[A], COLLECTOR CURRENT

0.1

1

10

100

100

1k

10k

I

C

= 500 I

B

V

CE

(sat)

V

BE

(sat)

I

C

[A], COLLECTOR CURRENT

0.1

1

10

100

1

10

100

1k

10k

V

CB

[V], COLLECTOR-BASE VOLTAGE

I

E

=0, f=1MHz

0.1

1

10

100

0.01

0.1

1

10

100

5ms

100µs

1ms

DC

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

0

20

40

60

80

100

120

T

C

[