Low Noise Amplifier,

0.01 GHz to 10 GHz

Data Sheet

HMC8411LP2FE

Rev. A

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FEATURES

Low noise figure: 1.7 dB typical

Single positive supply (self biased)

High gain: 15.5 dB typical

High OIP3: 34 dBm typical

6-lead, 2 mm × 2 mm LFCSP

APPLICATIONS

Test instrumentation

Military communications

FUNCTIONAL BLOCK DIAGRAM

2

1

3

6

5

4

NC

NC

GND

HMC8411LP2FE

TOP VIEW

(Not to Scale)

Figure 1.

GENERAL DESCRIPTION

The HMC8411LP2FE is a gallium arsenide (GaAs), monolithic

microwave integrated circuit (MMIC), pseudomorphic high

electron mobility transistor (pHEMT), low noise wideband

amplifier that operates from 0.01 GHz to 10 GHz.

The HMC8411LP2FE provides a typical gain of 15.5 dB, a

1.7 dB typical noise figure, and a typical output third-order

intercept (OIP3) of 34 dBm, requiring only 55 mA from a 5 V

typical enables the low noise amplifier (LNA) to function as a

local oscillator (LO) driver for many of Analog Devices, Inc.,

balanced, in-phase/quadrature (I/Q), or image rejection mixers.

The HMC8411LP2FE also features inputs and outputs that are

internally matched to 50 Ω, making the device ideal for surface-

mounted technology (SMT)-based, high capacity microwave

radio applications.

The HMC8411LP2FE is housed in a RoHS-compliant, 2 mm ×

2 mm, 6-lead LFCSP.

Multifunction pin names may be referenced by their relevant

function only.