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PDTC144EEF датащи(PDF) 2 Page - NXP Semiconductors |
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PDTC144EEF датащи(HTML) 2 Page - NXP Semiconductors |
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2 / 14 page ![]() 2004 Aug 17 2 Philips Semiconductors Product specification NPN resistor-equipped transistors; R1=47k Ω, R2 = 47 kΩ PDTC144E series FEATURES • Built-in bias resistors • Simplified circuit design • Reduction of component count • Reduced pick and place costs. APPLICATIONS • General purpose switching and amplification • Inverter and interface circuits • Circuit driver. QUICK REFERENCE DATA DESCRIPTION NPN resistor-equipped transistor (see “Simplified outline, symbol and pinning” for package details). SYMBOL PARAMETER TYP. MAX. UNIT VCEO collector-emitter voltage − 50 V IO output current (DC) − 100 mA R1 bias resistor 47 − k Ω R2 bias resistor 47 − k Ω PRODUCT OVERVIEW Note 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. TYPE NUMBER PACKAGE MARKING CODE PNP COMPLEMENT PHILIPS EIAJ PDTC144EE SOT416 SC-75 08 PDTA144EE PDTC144EEF SOT490 SC-89 08 PDTA144EEF PDTC144EK SOT346 SC-59 08 PDTA144EK PDTC144EM SOT883 SC-101 E7 PDTA144EM PDTC144ES SOT54 (TO-92) SC-43 TC144E PDTA144ES PDTC144ET SOT23 − *08(1) PDTA144ET PDTC144EU SOT323 SC-70 *08(1) PDTA144EU |
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