Page

v1.1

2

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

-20

-

-

V

Zero Gate Voltage Drain Current

-

-

-1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

-0.45

-0.7

-1.0

V

-

39

52

Drain-Source On-State Resistance

-

58

75

mΩ

Forward Transconductance

6

-

-

S

Dynamic Characteristics (Note4)

Input Capacitance

-

740

-

PF

Output Capacitance

-

290

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

190

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

-

12

-

nS

Turn-on Rise Time

-

35

-

nS

Turn-Off Delay Time

-

30

-

nS

Turn-Off Fall Time

-

10

-

nS

Total Gate Charge

-

7.8

-

nC

Gate-Source Charge

-

1.2

-

nC

Gate-Drain Charge

-

1.6

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

-

-

-1.2

V

Diode Forward Current (Note 2)

-

-

1.6

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

HM2305PR