Features

• High Surge Capability

D-67 Package

• Not ESD Sensitive

Parameter

Symbol

MBRH24020(R) MBRH24030(R)

Unit

Repetitive peak reverse

voltage

20

30

V

RMS reverse voltage

14

21

V

DC blocking voltage

20

30

V

Operating temperature

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

°C

Parameter

Symbol

MBRH24020(R) MBRH24030(R)

Unit

Average forward current

(per pkg)

240

240

A

Maximum instantaneous

forward voltage

0.72

0.72

1

1

10

10

50

50

Thermal characteristics

Thermal resistance, junction-

case

0.30

0.30

°C/W

Peak forward surge current

MBRH24020 thru MBRH24040R

Conditions

MBRH24040(R)

35

25

MBRH24035(R)

-55 to 150

Silicon Power

Schottky Diode

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

• Types from 20 V to 40 V V

RRM

Maximum instantaneous

reverse current at rated DC

blocking voltage

MBRH24035(R)

0.30

0.30

0.72

0.72

50

50

240

240

3300

3300

3300

-55 to 150

-55 to 150

Conditions

40

28

40

35

-55 to 150

MBRH24040(R)

1

1

3300

A

10

10

mA

V

1

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrh24020.pdf