MBRH20035R datasheet(1/3 Pages) GENESIC

номер детали	MBRH20035R

подробное описание детали	Silicon Power Schottky Diode

PDF	3 Pages

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производитель	GENESIC [GeneSiC Semiconductor, Inc.]

домашняя страница	http://www.genesicsemi.com/

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VRRM = 20 V - 40 V

IF(AV) = 200 A

Features

• High Surge Capability

D-67 Package

• Not ESD Sensitive

Parameter

Symbol

MBRH20020(R) MBRH20030(R)

Unit

Repetitive peak reverse

voltage

VRRM

20

30

V

RMS reverse voltage

VRMS

14

21

V

DC blocking voltage

VDC

20

30

V

Operating temperature

Tj

-55 to 150

°C

Storage temperature

Tstg

-55 to 150

°C

Parameter

Symbol

MBRH20020(R) MBRH20030(R)

Unit

Average forward current

(per pkg)

IF(AV)

200

A

Maximum instantaneous

forward voltage

0.70

1

10

50

Thermal characteristics

Thermal resistance, junction-

case

RΘJC

0.35

°C/W

-55 to 150

Conditions

40

28

40

35

-55 to 150

MBRH20040(R)

1

MBRH20035(R)

0.35

Tj = 150 °C

0.35

0.70

50

200

3000

Silicon Power

Schottky Diode

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

mA

V

MBRH20020 thru MBRH20040R

Tj = 25 °C

IFM = 200 A, Tj = 25 °C

Conditions

MBRH20040(R)

35

25

MBRH20035(R)

-55 to 150

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

• Types from 20 V to 40 V V

RRM

TC = 125 °C

A

Tj = 100 °C

10

Maximum instantaneous

reverse current at rated DC

blocking voltage

IR

VF

Peak forward surge current

IFSM

tp = 8.3 ms, half sine

1

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbrh20020.pdf

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MBRH20035R датащи(PDF) 1 Page - GeneSiC Semiconductor, Inc.

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