PMBTA42 datasheet(1/4 Pages) ISC

номер детали	PMBTA42

подробное описание детали	isc Silicon NPN Power Transistor

PDF	4 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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isc Silicon NPN Power Transistor

PMBTA42

DESCRIPTION

·

Collector-Emitter sustaining Voltage

: VCEO=300V(Min)

·

Low current

·

SOT-23 plastic package

·

Minimum Lot-to-Lot variations for robust device

performance and reliable operation

APPLICATIONS

·

Telephony and professional communication equipment.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

300

V

VCEO

Collector-Emitter Voltage

300

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

500

mA

PC

Total Power Dissipation

@ TC=25℃

350

mW

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

Аналогичный номер детали - PMBTA42

производитель	номер детали	датащи	подробное описание детали
NXP Semiconductors	PMBTA42	41Kb / 8P	NPN high-voltage transistor 1999 Apr 22
NXP Semiconductors	PMBTA42	218Kb / 9P	300 V, 100 mA NPN high-voltage transistor Rev. 05-12 December 2008
Nexperia B.V. All right...	PMBTA42	319Kb / 10P	300 V, 100 mA NPN high-voltage transistor Rev. 05 - 12 December 2008
NXP Semiconductors	PMBTA42/DG	218Kb / 9P	300 V, 100 mA NPN high-voltage transistor Rev. 05-12 December 2008
Nexperia B.V. All right...	PMBTA42/DG	319Kb / 10P	300 V, 100 mA NPN high-voltage transistor Rev. 05 - 12 December 2008

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PMBTA42 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

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Аналогичный номер детали - PMBTA42

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