IXFP10N60P datasheet(1/5 Pages) IXYS

номер детали	IXFP10N60P

подробное описание детали	Power MOSFET

PDF	5 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

600

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

600

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C10

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

25

A

I

A

T

C = 25C10

A

E

AS

T

C = 25C

500

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150C

10

V/ns

P

D

T

C = 25C

200

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in

Weight

TO-263

2.5

g

TO-220

3.0

g

DS99424G(6/18)

Polar3 TM HiPerFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFA10N60P

IXFP10N60P

Features



International Standard Packages



Fast Intrinsic Rectifier



Avalanche Rated



Low R

DS(ON) and QG



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

600

V

GS(th)

V

DS = VGS, ID = 1mA

3.0

5.5

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

25

A

T

J = 125C

500 μA

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Note 1

740 m



G = Gate

D

= Drain

S = Source

Tab = Drain

V

DSS

= 600V

I

D25

= 10A

R

DS(on) 

 740m



TO-263 (IXFA)

G

S

D (Tab)

TO-220 (IXFP)

D (Tab)

S

G

D

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IXFP10N60P датащи(PDF) 1 Page - IXYS Corporation

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