IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXFA7N100P IXFP7N100P

IXFH7N100P

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

g

fs

V

3.6

6.0

S

R

Gi

Gate Input Resistance

1.8



C

iss

2590

pF

C

oss

V

158

pF

C

rss

26

pF

t

d(on)

25

ns

t

r

49

ns

t

d(off)

42

ns

t

f

44

ns

Q

g(on)

47

nC

Q

gs

V

21

nC

Q

gd

21

nC

R

thJC

0.42

C/W

R

thCS

TO-220

0.50

C/W

TO-247

0.21

C/W

Note

1. Pulse test, t

 300s, duty cycle, d 2%.

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

7,005,734B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

7,063,975B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728B1

6,583,505

6,710,463

6,771,478B2 7,071,537

Resistive Switching Times

V

R

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max

I

S

V

7

A

I

SM

Repetitive, Pulse Width Limited by T

JM

28

A

V

SD

I

1.3

V

t

rr

300

ns

Q

RM

0.4

C

I

RM

4.0

A

I

V