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IXYS reserves the right to change limits, test conditions and dimensions.

V

RRM

= 600 V

I

D(AV)M

= 6.6 A

C

Silicon Carbide

Schottky

Rectifier Bridge

1

5

Advanced Technical Information

FBS 10-06SC

Features

• Silicon Carbide Schottky Diodes

- no reverse recovery at turn off - only

charge of junction capacity - soft turn

off waveform

- no forward recovery at turn on

- switching behaviour independent of

temperature

- low leakage current

• ISOPLUS i4-PAC(TM) package

- isolated back surface

- low coupling capacity between pins

and heatsink

- enlarged creepage towards heatsink

- application friendly pinout

- high reliability

- industry standard outline

Applications

• output rectifiers of high end switched

mode power supplies

• other high frequency rectifiers

Rectifier Bridge

Symbol

Conditions

Maximum Ratings

V

RRM

600

V

I

FAV

T

(per diode)

3

A

I

D(AV)M

T

6.6

A

I

FSM

T

12

A

P

tot

T

(per diode)

19

W

Symbol

Conditions

Characteristic Values

(T

min.

typ.

max.

V

F

I

T

25°C

1.7

2.0

V

T

1.9

V

I

R

V

25°C

0.2

mA

T

0.04

mA

C

J

V

T

9

pF

R

thJC

(per diode)

8 K/W

R

thJS

11.5

K/W

Data according to IEC 60747 and refer to a single diode unless otherwise stated.