IXTP02N50D datasheet(1/4 Pages) IXYS

номер детали	IXTP02N50D

подробное описание детали	High Voltage Power MOSFET

PDF	4 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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1 / 4 page

Symbol

Test Conditions

Maximum Ratings

V

DSX

T

J

= 25

C to 150C

500

V

DGX

T

J

= 25

C to 150C

500

V

GSX

Continuous

20

V

GSM

Transient

30

V

I

D25

T

C = 25C

200

mA

I

DM

T

C = 25C, Pulse Width Limited by TJ

800

mA

P

D

T

C = 25C

25

W

T

A = 25C

1.1

W

T

J

- 55 ... +150

C

T

JM

150

C

T

stg

- 55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in.

Weight

TO-252

0.35

g

TO-251

0.40

g

TO-220

3.00

g

DS98861C(5/17)

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSX

V

GS = -10V, ID = 25A

500

V

GS(off)

V

DS = 25V, ID = 25A

- 2.5

- 5.0

V

I

GSX

V

GS = 20V, VDS = 0V

100 nA

I

DSX(off)

V

DS = VDSX, VGS = -10V

10

A

T

J = 125C

250

A

R

DS(on)

V

GS = 0V, ID = 50mA, Note 1

20

30



I

D(on)

V

GS = 0V, VDS = 25V, Note 1

250

mA

High Voltage

Power MOSFET

N-Channel

IXTY02N50D

IXTU02N50D

IXTP02N50D

V

DSX

=

500V

I

D25

=

200mA

R

DS(on) 



30



Features

• Normally ON Mode

•

 International Standard Packages

•

 Low R

DS(on) HDMOS

TM

Process

• Rugged Polysilicon Gate Cell Structure

• Fast Switching Speed

Advantages

• Easy to Mount

• Space Savings

• High Power Density

Applications

• Level Shifting

• Triggers

• Solid State Relays

• Current Regulators

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-252 (IXTY)

G D

S

TO-220AB (IXTP)

D (Tab)

G

S

TO-251 (IXTU)

D

S

G

D (Tab)

G

D

S

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