IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTT16N10D2

IXTH16N10D2

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

7

11

S

C

iss

5700

pF

C

oss

V

1980

pF

C

rss

940

pF

t

d(on)

45

ns

t

r

43

ns

t

d(off)

340

ns

t

f

70

ns

Q

g(on)

225

nC

Q

gs

V

22

nC

Q

gd

126

nC

R

thJC

0.18

C/W

R

thCS

TO-247

0.21

C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

556

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

SD

I

0.80

1.30

V

t

rr

205

ns

I

RM

8.50

A

Q

RM

0.88

μC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

I

V

TO-247 Outline

R

L1

A2

Q

E

A

D

c

B

A

b

C

L

D

S

D2

E1

A2

A2

A2

e

0P1

ixys option

A1

b4

b2

D1

0P O 0K M D B M

+

O J M C A M

+

1

2

3

4

+

+

PINS: 1 - Gate

2, 4 - Drain

3 - Source

TO-268 Outline

Terminals: 1 - Gate

2,4 - Drain

3 - Source