IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA6N100D2HV

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a

"considered reflection" of the anticipated result. IXYS reserves the right to change limits, test

conditions, and dimensions without notice.

TO-263HV Outline

PIN: 1 - Gate

2 - Source

3 - Drain

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

2.6

4.2

S

C

iss

2650

pF

C

oss

V

167

pF

C

rss

41

pF

t

d(on)

25

ns

t

r

80

ns

t

d(off)

34

ns

t

f

47

ns

Q

g(on)

95

nC

Q

gs

V

11

nC

Q

gd

51

nC

R

thJC

0.41

C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

180

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

SD

I

0.8

1.3

V

t

rr

952

ns

I

RM

16

A

Q

RM

7.6

μC

Note 1. Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

I

V