IXTA3N100D2

IXTP3N100D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

1.2

2.0

S

C

iss

1020

pF

C

oss

V

68

pF

C

rss

17

pF

t

d(on)

27

ns

t

r

67

ns

t

d(off)

34

ns

t

f

40

ns

Q

g(on)

37.5

nC

Q

gs

V

4.4

nC

Q

gd

21.2

nC

R

thJC

1.0

C/W

R

thCS

TO-220

0.50

C/W

Safe-Operating-Area Specification

Characteristic Values

Symbol

Test Conditions

Min.

Typ.

Max.

SOA

V

75

W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

V

SD

I

0.8

1.3

V

t

rr

970

ns

I

RM

12.7

A

Q

RM

6.16

μC

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or more of the following U.S. patents: 4,860,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1. Pulse test, t

 300s, duty cycle, d  2%.

Resistive Switching Times

V

R

I

V

TO-220 Outline

Pins: 1 - Gate

2 - Drain

3 - Source

TO-263 Outline

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.40

0.74

.016

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

8.00

8.89

.280

.320

E

9.65

10.41

.380

.405

E1

6.22

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.13

0

.005

1. Gate

2. Drain

3. Source

4. Drain

Bottom

Side