IXTA6N100D2 datasheet(4/6 Pages) IXYS

номер детали	IXTA6N100D2

подробное описание детали	N-Channel MOSFET

PDF	6 Pages

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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4 / 6 page

IXTA6N100D2

IXTP6N100D2

IXTH6N100D2

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fig. 7. Normalized RDS(on) vs. Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS = 0V

I D = 3A

Fig. 8. RDS(on) Normalized to ID = 3A Value

vs. Drain Current

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

101214

ID - Amperes

VGS = 0V

TJ = 125

TJ = 25

Fig. 9. Input Admittance

-4.0

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

0.0

0.5

1.0

VGS - Volts

TJ = 125

- 40

VDS = 30V

Fig. 10. Transconductance

024

ID - Amperes

TJ = - 40

VDS = 30V

125

Fig. 12. Forward Voltage Drop of Intrinsic Diode

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

VSD - Volts

TJ = 125

VGS = -10V

TJ = 25

Fig. 11. Breakdown and Threshold Voltages

vs. Junction Temperature

0.8

0.9

1.0

1.1

1.2

1.3

-50

-25

100

125

150

TJ - Degrees Centigrade

VGS(off) @ VDS = 25V

BVDSX@ VGS = - 5V

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