IXFP4N100P datasheet(1/5 Pages) IXYS

номер детали	IXFP4N100P

подробное описание детали	Power MOSFET

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производитель	IXYS [IXYS Corporation]

домашняя страница	http://www.ixys.com

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DS99921B(11/18)

PolarTM HiPerFETTM

Power MOSFET

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXFA4N100P

IXFP4N100P

V

DSS

= 1000V

I

D25

= 4A

R

DS(on) 

 3.3



Features



International Standard Packages



Low R

DS(on) and QG



Avalanche Rated



Low Package Inductance



Fast Intrinsic Rectifier

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



Laser Drivers



AC and DC Motor Drives



Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250A

1000

V

GS(th)

V

DS = VGS, ID = 250A

3.0

6.0

V

I

GSS

V

GS =  30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

10

A

T

J = 125C

750

A

R

DS(on)

V

GS = 10V, ID = 0.5 • ID25, Notes 1

3.3



Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

1000

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

1000

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C

4

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

8

A

I

A

T

C = 25C4

A

E

AS

T

C = 25C

200

mJ

dv/dt

I

S

 I

DM, VDD  VDSS, TJ  150°C

10

V/ns

P

D

T

C = 25C

150

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

1.6 mm (0.062in.) from Case for 10s

260

°C

F

C

Mounting Force (TO-263)

10..65 / 2.2..14.6

Nm/lb.in

M

d

Mounting Torque (TO-220)

1.13 / 10

Nm/lb.in

Weight

TO-263

2.5

g

TO-220

3.0

g

G = Gate

D

= Drain

S = Source

Tab = Drain

TO-263 (IXFA)

G

S

D (Tab)

TO-220 (IXFP)

D (Tab)

S

G

D

Аналогичный номер детали - IXFP4N100P

производитель	номер детали	датащи	подробное описание детали
IXYS Corporation	IXFP4N100P	157Kb / 4P	Polar HiPerFET Power MOSFET
Inchange Semiconductor ...	IXFP4N100P	332Kb / 2P	isc N-Channel MOSFET Transistor
IXYS Corporation	IXFP4N100PM	121Kb / 4P	Polar HiperFET Power MOSFET

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IXFP4N100P датащи(PDF) 1 Page - IXYS Corporation

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Аналогичный номер детали - IXFP4N100P

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