Module Type 160 A

Features

• High Surge Capability

• Type 80 V V

RRM

• Isolation Type Package

SOT-227 Package

• Electrically Isolated Base Plate

• Not ESD Sensitive

Parameter

Symbol

Value

Unit

Maximum recurrent peak reverse voltage

80

V

Maximum DC blocking voltage

80

V

Maximum RMS Voltage

56

V

Operating temperature

-40 to 150

°C

Storage temperature

-40 to 150

°C

Parameter

Symbol

Value

Unit

Average forward current

(per pkg)

160

A

Peak forward surge current

(per leg)

900

A

0.84

V

0.73

V

1

mA

10

mA

30

mA

Isolation voltage

2500

V

Thermal characteristics

* Pulse Test: Pulse width 300 µs, Duty < 2 %

Conditions

Electrical characteristics at 25 °C, unless otherwise specified

Conditions

MBR2X080A080

8.3 ms, half sine

Maximum ratings

Maximum thermal resistance junction to case

(per leg)

°C/W

0.60

Maximum instantaneous reverse current at

rated DC blocking voltage (per leg)

Maximum instantaneous forward voltage*

(per leg)

A.C. 1 minute

Schottky Rectifier

1

Oct. 2018

http://www.diodemodule.com/silicon_products/modules/mbr2x080a080