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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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HM3N40PR датащи(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM3N40PR датащи(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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2 / 10 page  Electrical Characteristics（Tc= 25℃ unless otherwise specified）： OFF Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units VDSS Drain to Source Breakdown Voltage VGS=0V, ID=250µA 400 -- -- V Δ BVDSS/ΔTJ Bvdss Temperature Coefficient ID=250uA,Reference25℃ -- 0.7 -- V/℃ VDS =400V, VGS= 0V, Ta = 25℃ -- -- 1 IDSS Drain to Source Leakage Current VDS =320V, VGS= 0V, Ta = 125℃ 10 µ A IGSS(F) Gate to Source Forward Leakage VDS =0V, VGS= 30V -- -- 100 nA IGSS(R) Gate to Source Reverse Leakage VDS =0V,VGS =-30V -- -- -100 nA ON Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units RDS(ON) Drain-to-Source On-Resistance VGS=10V,ID=1A -- 2.8 3.4 Ω VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 250µA 2.0 4.0 V Pulse width tp≤380µs,δ≤2% Dynamic Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units gfs Forward Transconductance VDS=15V, ID =1A 1 S Ciss Input Capacitance -- 139 Coss Output Capacitance -- 21 Crss Reverse Transfer Capacitance VGS = 0V VDS = 25V f = 1.0MHz -- 4.5 pF Resistive Switching Characteristics Rating Symbol Parameter Test Conditions Min. Typ. Max. Units td(ON) Turn-on Delay Time -- 6 -- tr Rise Time -- 7 -- td(OFF) Turn-Off Delay Time -- 30 -- tf Fall Time ID =3.0A VDD = 200V VGS = 10V RG = 25Ω -- 9 -- ns Qg Total Gate Charge -- 5 Qgs Gate to Source Charge -- 0.9 Qgd Gate to Drain (“Miller”)Charge ID =3.0A VDD =200V VGS = 10V -- 2.5 nC Silicon N-Channel Power MOSFET HM3N40PR Shenzhen H&M Semiconductor Co.Ltd http：//www.hmsemi.com |
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