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HM2N15PR датащи(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM2N15PR датащи(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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2 / 7 page ![]() Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA On Characteristics (Note 3) Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 1.5 2.0 2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=1.5A - 260 300 mΩ Forward Transconductance gFS VDS=15V,ID=1.5A - 3 - S Dynamic Characteristics (Note4) Input Capacitance Clss - 235 - PF Output Capacitance Coss - 36 - PF Reverse Transfer Capacitance Crss VDS=25V,VGS=0V, F=1.0MHz - 20 - PF Switching Characteristics (Note 4) Turn-on Delay Time td(on) - 8 - nS Turn-on Rise Time tr - 10 - nS Turn-Off Delay Time td(off) - 20 - nS Turn-Off Fall Time tf VDD=75V,ID=1A,RL=75Ω VGS=10V,RG=6Ω - 15 - nS Total Gate Charge Qg - 8 nC Gate-Source Charge Qgs - 1.4 - nC Gate-Drain Charge Qgd VDS=75V,ID=1.5A, VGS=10V - 2.1 - nC Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD VGS=0V,IS=2A - - 1.2 V Diode Forward Current (Note 2) IS - - 2 A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to product Page 2 HM2N15PR |
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