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HM5802 датащи(PDF) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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HM5802 датащи(HTML) 4 Page - Shenzhen Huazhimei Semiconductor Co., Ltd |
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4 / 8 page ![]() ______________________________________ _______________________________________________________________________________ Trickle charge Threshold Voltage Vtrikl RPROG =10K,Vbat Rising 2.7 2.9 3.0 V Trickle voltage hysteresis voltage Vtrhys RPROG =10K 55 120 200 mV Recharge Battery threshold Voltage ΔVrecg V FLOAT - VRECHRG 150 300 mV UVLO Voltage Vuvlo VBAT=3.1V;Rprog=10k; 3.72 3.85 4 V CHRG pin Output low voltage Vchrg Ichrg=5mA 0.35 0.55 V Overcharge Detection Voltage VCU 4.25 4.30 4.35 V Overcharge Release Voltage VCL 4.05 4.10 4.15 V Overdischarge Detection Voltage VDL 2.7 2.8 2.9 V Overdischarge Release Voltage VDR 2.9 3.0 3.1 V Charger Detection Voltage VCHA -0.06 V Overdischarge Current1 Detection IIOV1 Vbat=3.5V 0.4 A Load Short-Circuiting Detection ISHORT Vbat=3.5V 20 A Equivalent FET on Resistance RDS(ON) Vbat=3.6V Ivm =1.0A 40 45 55 mΩ Overcharge Voltage Detection Delay Time tCU 130 mS Overdischarge Voltage Detection Delay Time tDL 40 mS Overdischarge Current Detection Delay Time tIOV Vbat=3.5V 10 mS Load Short-Circuiting Detection Delay Time tSHORT Vbat=3.5V 75 uS |
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