HM4618SP datasheet(2/6 Pages) HMSEMI

номер детали	HM4618SP

подробное описание детали	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

PDF	6 Pages

Scroll/Zoom	100%

производитель	HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]

домашняя страница	http://www.hmsemi.com/

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2 / 6 page

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Condition

Min

Typ

Max

Unit

Static Parameters

BVSSS

Source to Source Breakdown Voltage

IS=1mA, VGS=0V, Test Circuit 1

ISSS

Zero- Gate Voltage Source Current

VSS=20V, VGS=0V, Test Circuit 1

μA

IGSS

Gate to Source Leakage Current

VSS=0V, VGS= ±8V, Test Circuit 2

±1

μA

VGS(off)

Cutoff Voltage

VSS=10V, IS=1mA, Test Circuit 3

0.5

0.7

1.3

|ygFS|

Forward Transfer Admittance

VSS=10V,IS=3A, Test Circuit 4

6.5

VGS=4.5V,IS=3A, Test Circuit 5

13.6

mΩ

VGS=4.0V,IS=3A, Test Circuit 5

mΩ

VGS=3.7V,IS=3A, Test Circuit 5

14.2

mΩ

VGS=3.1V,IS=3A, Test Circuit 5

15.1

mΩ

RSS(on)

Static Source to Source

On-Resistance

VGS=2.5V,IS=3A, Test Circuit 5

16.6

mΩ

td(on)

Turn-on Delay Time

Turn-on Rise Time

td(off)

Turn-Off Delay Time

Turn-Off Fall Time

VSS=10V,IS=3A VGS=4.5V

Test Circuit 7

Total Gate Charge

VSS=10V,IS=6A,VGS=4.5V

Test Circuit 8

25.4

VF(S-S)

Diode Forward Voltage

VGS=0V,IS=6A

1.2

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