© Semiconductor Components Industries, LLC, 2006

March, 2006 − Rev. 6

1

Publication Order Number:

BAS40LT1/D

BAS40LT1

Preferred Device

Schottky Barrier Diodes

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low

forward voltage reduces conduction loss. Miniature surface mount

package is excellent for hand held and portable applications where

space is limited.

Features

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Reverse Voltage

40

V

Forward Power Dissipation

Derate above 25

°C

225

1.8

mW

mW/

°C

Operating Junction and Storage

Temperature Range

− 55 to +150

°C

Forward Continuous Current

120

mA

Forward Surge Current

t

v 1 s

t

v 10 ms

200

600

mA

Thermal Resistance

Junction−to−Ambient

508

(Note 1)

311

(Note 2)

°C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−4 @ minimum pad.

2. FR−4 @ 1.0 x 1.0 in pad.

http://onsemi.com

Preferred devices are recommended choices for future use

and best overall value.

Device

Package

ORDERING INFORMATION

BAS40LT1

SOT−23

3000/Tape & Reel

SOT−23 (TO−236AB)

CASE 318

STYLE 8

40 VOLTS

SCHOTTKY BARRIER DIODES

MARKING DIAGRAM

1

2

3

3

CATHODE

1

ANODE

B1 M

G

G

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

BAS40LT1G

SOT−23

(Pb−Free)

3000/Tape & Reel

B1 = Specific Device Code

M

= Date Code*

G

= Pb−Free Package

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may vary

depending upon manufacturing location.