5A，550V

N-CHANNEL MOSFET

KIA

SEMICONDUCTORS

830S

KIA

SEMICONDUCTORS

KIA

SEMICONDUCTORS

6. Electrical characteristics

Parameter

Symbol

Test Conditions

Min

Typ

Max

Units

Drain-source breakdown voltage

550

-

-

V

Breakdown voltage temperature coeffcient，

Figure 11

Reference to 25℃

0.61

V/℃

Drain-source leakage current

-

-

1

μA

-

-

10

Gate threshold voltage,Figure 12

2

-

4

V

Gate-source forward leakage

-

-

1

uA

Gate-source reverse leakage

-

-

-1

Static drain-source on-resistance

Figure 9 and 10

-

1.0

1.2

Ω

Forward transconductance

gfs

（note4）

-

3

-

S

Input capacitance

f=1MHz

-

682

-

pF

Output capacitance

-

23

-

Reverse transfer capacitance

-

9

-

Turn-on delay time

-

25

-

ns

Rise time

-

23

-

Turn-off delay time

-

92.5

-

Fall time

-

47

-

Total gate charge

-

16.3

-

nC

Gate-source charge

-

3.6

-

Gate-drain charge

-

5.1

-

Continuous source current（body biode）

Integral pn-diode in

MOSFET

-

-

5

A

Maximum pulsed current（body biode）

-

-

20

Diode forward voltage

-

-

1.4

V

Reverse recovery time

di/dt=100A/

μs（note4）

-

312

-

nS

Reverse recovery charge

-

2.1

-

uC

Notes:

1. Repetitive Rating : Pulse width limited by maximum junction temperature

4. Pulse Test : Pulse width<300us, Duty cycle<2%

5. Essentially independent of operating temperature

3 of7

Rev 1.0 Aug 2015