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HM4N10PR датащи(PDF) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

номер детали HM4N10PR
подробное описание детали  N-Channel Enhancement Mode Power MOSFET
PDF  7 Pages
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производитель  HMSEMI [Shenzhen Huazhimei Semiconductor Co., Ltd]
домашняя страница  http://www.hmsemi.com/
Logo HMSEMI - Shenzhen Huazhimei Semiconductor Co., Ltd

HM4N10PR датащи(HTML) 2 Page - Shenzhen Huazhimei Semiconductor Co., Ltd

  HM4N10PR Datasheet HTML 1Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4N10PR Datasheet HTML 2Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4N10PR Datasheet HTML 3Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4N10PR Datasheet HTML 4Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4N10PR Datasheet HTML 5Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4N10PR Datasheet HTML 6Page - Shenzhen Huazhimei Semiconductor Co., Ltd HM4N10PR Datasheet HTML 7Page - Shenzhen Huazhimei Semiconductor Co., Ltd  
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v1.0
2
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
On Characteristics
(Note 3)
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
1.0
1.5
2.0
V
VGS=10V, ID=
4A
-
136
160
Drain-Source On-State Resistance
RDS(ON)
VGS=4.5V, ID=
4A
-
140
170
mΩ
Forward Transconductance
gFS
VDS=5V,ID=
4A
-
5
-
S
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
-
650
-
PF
Output Capacitance
Coss
-
24
-
PF
Reverse Transfer Capacitance
Crss
VDS=50V,VGS=0V,
F=1.0MHz
-
20
-
PF
Switching Characteristics
(Note 4)
Turn-on Delay Time
td(on)
-
6
-
nS
Turn-on Rise Time
tr
-
4
-
nS
Turn-Off Delay Time
td(off)
-
20
-
nS
Turn-Off Fall Time
tf
VDD=50V, RL=19Ω
VGS=10V,RG=3Ω
-
4
-
nS
Total Gate Charge
Qg
-
20
nC
Gate-Source Charge
Qgs
-
2.1
-
nC
Gate-Drain Charge
Qgd
VDS=50V,ID=
4A,
VGS=10V
-
3.3
-
nC
Drain-Source Diode Characteristics
Diode Forward Voltage
(Note 3)
VSD
VGS=0V,IS=
4A
-
-
1.2
V
Diode Forward Current
(Note 2)
IS
-
-
3
A
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to productio
HM4N10PR



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