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GD25LQ128CSIS датащи(PDF) 60 Page - GigaDevice Semiconductor (Beijing) Inc.

номер детали GD25LQ128CSIS
подробное описание детали  1.8V Uniform Sector Dual and Quad Serial Flash
PDF  73 Pages
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производитель  GIGADEVICE [GigaDevice Semiconductor (Beijing) Inc.]
домашняя страница  http://www.gigadevice.com/
Logo GIGADEVICE - GigaDevice Semiconductor (Beijing) Inc.

GD25LQ128CSIS датащи(HTML) 60 Page - GigaDevice Semiconductor (Beijing) Inc.

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1.8V Uniform Sector
Dual and Quad Serial Flash
GD25LQ128C
60
8. ELECTRICAL CHARACTERISTICS
8.1. POWER-ON TIMING
Vcc(max)
Vcc(min)
VWI
tVSL
Chip Selection is not allowed
Device is fully
accessible
Time
Table6. Power-Up Timing And Write Inhibit Threshold
Symbol
Parameter
Min
Max
Unit
tVSL
VCC(min) To CS# Low
5
ms
VWI
Write Inhibit Voltage
1
1.4
V
8.2. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1(each byte contains FFH).The Status Register
contains 00H (all Status Register bits are 0).
8.3. ABSOLUTE MAXIMUM RATINGS
Parameter
Value
Unit
Ambient Operating Temperature
-40 to 85
℃
Storage Temperature
-65 to 150
℃
Applied Input/Output Voltage
-0.6 to VCC+0.4
V
Transient Input/Output Voltage (note: overshoot)
-2.0 to VCC+2.0
V
VCC
-0.6 to 2.5
V
Figure 40. Input Test Waveform and Measurement Level
Vss
20ns
Maximum Negative Overshoot Waveform
Maximum Positive Overshoot Waveform
20ns
20ns
Vss-2.0V
Vcc
20ns
20ns
20ns
Vcc + 2.0V



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