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IL255 датащи(PDF) 2 Page - Vishay Siliconix |
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IL255 датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 6 page ![]() www.vishay.com 2 Document Number 83619 Rev. 1.6, 26-Oct-04 IL255 Vishay Semiconductors Output Coupler Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Output Parameter Test condition Symbol Value Unit Collector-emitter breakdown voltage BVCEO 30 V Emitter-base breakdown voltage BVEBO 5.0 V Collector-base breakdown voltage BVCBO 70 V Power dissipation Pdiss 200 mW Derate linearly from 25°C 2.6 mW/°C Parameter Test condition Symbol Value Unit Isolation test voltage ( between emitter and detector, refer to standard climate 23 °C/50 %RH, DIN 50014) VISO 5300 VRMS Creepage ≥ 7.0 mm Clearance ≥ 7.0 mm Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Total dissipation Ptot 250 mW Derate linearly from 25 °C 3.3 mW/°C Storage temperature Tstg - 55 to + 150 °C Operating temperature Tamb - 55 to + 100 °C Lead soldering time at ≤ 260 °C 10 sec. Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = ± 100 mA VF 1.4 1.7 V Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter breakdown voltage IC = 10 mA BVCEO 30 50 V Emitter-collector breakdown voltage IE = 10 µABVECO 7.0 10 V Collector-base breakdown voltage IC = 100 µABVCBO 70 V Emitter-base breakdown voltage IE = 100 µABVEBO 7.0 V Collector-emitter leakage current VCE = 10 V ICEO 5.0 50 nA |
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