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NKS200-100 датащи(PDF) 4 Page - Nell Semiconductor Co., Ltd |
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NKS200-100 датащи(HTML) 4 Page - Nell Semiconductor Co., Ltd |
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4 / 5 page ![]() RoHS RoHS www.nellsemi.com Page 4 of 5 Fig.4 Typical junction capacitance vs. reverse voltage Fig.5 Maximum allowable case temperature vs. Average forward current Fig.6 Forward power loss characteristics Fig.7 Maximum non-repetitive surge current Reverse voltage, V (V) R Average forward current, l (A) F(AV) Square wave pulse duration, t (µs) p Average forward current, l (A) F(AV) 10000 0 10 20 30 40 110 180 160 150 140 0 40 80 120 160 25 0 50 100 150 100000 1000 10 10000 1000 100 100 0 130 200 125 50 100 150 Nell High Power Products 120 110 100 300 + Fig.8 Unclamped lnductive test circuit L IRF460B R = 25Ω g D.U.T. Current Freewheel High-speed V = 25V d switch diode monitor Note (1) Formula used:T = T - (Pd+Pd ) x R ; C J REV thJC Pd = lnverse power loss = V x l (1-D); l at V = rated V REV R1 R R R1 R Pd = Forward power loss = l x V at (l /D)(see fig.6) F(AV) FM F(AV) 40HFL40S02 NKS200-100 Series 1000 50 60 70 80 90 100 170 280 DC Square wave (D = 0.50) 80% rated V applied r See note (1) 75 10000 100 (40FD04A) T = J 25ºC 240 250 200 250 RMS limit 200 DC 120° 180° 30° 60° 90° |
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