S85VR datasheet(1/3 Pages) GENESIC

номер детали	S85VR

подробное описание детали	Silicon Standard Recovery Diode

PDF	3 Pages

Scroll/Zoom	100%

производитель	GENESIC [GeneSiC Semiconductor, Inc.]

домашняя страница	http://www.genesicsemi.com/

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1 / 3 page

VRRM = 1400 V - 1600 V

IF = 85 A

Features

• High Surge Capability

DO-5 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

Unit

Repetitive peak reverse voltage

VRRM

V

RMS reverse voltage

VRMS

V

DC blocking voltage

VDC

V

Continuous forward current

IF

A

Operating temperature

Tj

°C

Storage temperature

Tstg

°C

Parameter

Symbol

Unit

Diode forward voltage

μA

mA

Thermal characteristics

Thermal resistance, junction -

case

RthJC

°C/W

VR = 100 V, Tj = 150 °C

V

10

4.5

10

4.5

0.65

S85V thru S85YR

VR = 100 V, Tj = 25 °C

IF = 85 A, Tj = 25 °C

TC ≤ 110 °C

Conditions

Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Silicon Standard

Recovery Diode

Conditions

TC = 25 °C, tp = 8.3 ms

Surge non-repetitive forward

current, Half Sine Wave

IF,SM

-55 to 150

Reverse current

IR

VF

2. Reverse polarity (R): Stud is anode.

• Types from 1400 V to 1600 V V

RRM

A

S85V (R)

1400

990

1400

85

1800

1600

1130

1600

85

1800

-55 to 150

S85Y (R)

S85V (R)

S85Y (R)

1.1

-55 to 150

C

A

C

Stud Stud

(R)

C

A

C

Stud Stud

(R)

DO- 5 (DO-203AB)

J

K

G

F

A

E

D

P

N

B

C

M

Inches

Millimeters

Min

Max

Min

Max

A

1/4 –28 UNF

B

0.669

0.687

17.19

17.44

C

-----

0.794

-----

20.16

D

-----

1.020

-----

25.91

E

0.422

0.453

10.72

11.50

F

0.115

0.200

2.93

5.08

G

-----

0.460

-----

11.68

J

-----

0.280

-----

7.00

K

0.236

-----

6.00

-----

M

-----

0.589

-----

14.96

N

-----

0.063

-----

1.60

P

0.140

0.175

3.56

4.45

1

Oct. 2018

http://www.diodemodule.com/silicon_products/studs/s85v.pdf

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