ESP32 datasheet(41/60 Pages) ESPRESSIF

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5. Electrical Characteristics

5.3 DC Characteristics (3.3 V, 25 °C)

Table 13: DC Characteristics (3.3 V, 25 °C)

Symbol

Parameter

Min

Typ

Max

Unit

CIN

Pin capacitance

VIH

High-level input voltage

0.75×VDD1 -

VDD1+0.3

VIL

Low-level input voltage

–0.3

0.25×VDD1 V

IIH

High-level input current

IIL

Low-level input current

VOH

High-level output voltage

0.8×VDD1

VOL

Low-level output voltage

0.1×VDD1

IOH

High-level source current

VDD3P3_CPU power domain 1, 2

(VDD1 = 3.3 V, VOH >= 2.64 V,

VDD3P3_RTC power domain 1, 2

output drive strength set to the

maximum)

VDD_SDIO power domain 1, 3

IOL

Low-level sink current

(VDD1 = 3.3 V, VOL = 0.495 V,

output drive strength set to the maximum)

RP U

Pull-up resistor

kΩ

RP D

Pull-down resistor

kΩ

VIL_nRST

Low-level input voltage of CHIP_PU to power off the chip

0.6

Notes:

1. Please see Table IO_MUX for IO’s power domain. VDD is the I/O voltage for a particular power domain of pins.

2. For VDD3P3_CPU and VDD3P3_RTC power domain, per-pin current sourced in the same domain is gradually reduced

from around 40 mA to around 29 mA, VOH >=2.64 V, as the number of current-source pins increases.

3. For VDD_SDIO power domain, per-pin current sourced in the same domain is gradually reduced from around 30 mA to

around 10 mA, VOH >=2.64 V, as the number of current-source pins increases.

5.4 Reliability Qualifications

Table 14: Reliability Qualifications

Reliability tests

Standards

Test conditions

Result

Electro-Static

Discharge

Sensitivity

(ESD), Charge Device Mode (CDM) 1

JEDEC EIA/JESD22-C101

±500 V, all pins

Pass

Electro-Static

Discharge

Sensitivity

(ESD), Human Body Mode (HBM) 2

JEDEC EIA/JESD22-A114

±1500 V, all pins

Pass

Latch-up (Over-current test)

JEDEC STANDARD NO.78

±50 mA

~ ±200 mA, room

temperature, test for IO

Pass

Latch-up (Over-voltage test)

JEDEC STANDARD NO.78

1.5 × Vmax, room tempera-

ture, test for Vsupply

Pass

Moisture Sensitivity Level (MSL)

J-STD-020, MSL 3

30 °C, 60% RH, 192 hours, IR

× 3 @260 °C

Pass

1. JEDEC document JEP157 states that 250 V CDM allows safe manufacturing with a standard ESD control process.

2. JEDEC document JEP155 states that 500 V HBM allows safe manufacturing with a standard ESD control process.

Espressif Systems

ESP32 Datasheet V3.0

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