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IRFZ10 датащи(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

номер детали IRFZ10
подробное описание детали  HEXFET Power MOSFET
PDF  7 Pages
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производитель  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
домашняя страница  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRFZ10 датащи(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRFZ10
HEXFET
®
Power MOSFET
www.artschip.com
2
Parameter
Min.
Typ.
Max.
Units
Test Conditions
Is
Continuous Source Current
(Body Diode)
-
-
10
ISM
Pulsed Source Current
(Body Diode) ①
-
-
40
A
MOSFET
symbol
showing the integral
reverse p-n junction
diode
VSD
Diode Forward Voltage
-
-
1.6
V
TJ=25℃, IS=10A, VGS=0V ④
trr
Reverse Recovery Time
-
70
140
ns
Qrr
Reverse Recovery Charge
-
0.20
0.40
µC
TJ=25℃, IF=10A
di/dt=100A/µs ④
ton
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
①
Repetitive rating: pulse width limited by max. junction temperature (See Figure 11)
③
ISD≤10A, di/dt ≤ 90A/µs, VDD≤V(BR)DSS, TJ≤175℃
Fig 1. Typical Output Characteristics,
Tc=25℃
Fig 3. Typical Transfer Characteristics
Fig 2. Typical Output Characteristics,
Tc=175℃
Fig 4. Normalized On-Resistance
Vs. Temperature



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