MTP2N20 datasheet(1/5 Pages) ARTSCHIP

номер детали	MTP2N20

подробное описание детали	N-Channel Power Mosfets

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IRF610-613

MTP2N18/20N20

N-Channel Power Mosfets

3.5A,150-220V

www.artschip.com

1

Description

These devices are n-channel, enhancement mode, power

MOSFETs designed especially for high speed applications,

such as switching power supplies, converters, AC and DC

motor controls, relay and solenoid drivers and other pulse

circuits.

Low RDS(on)

VGS Rated at ±20V

Silicon Gate for Fast Switching Speeds

IDSS, VDS(on), Specified at Elevated Temperature

Rugged

Low Drive Requirements

Ease of Paralleling

TO-220AB

IRF610

IRF611

IRF612

IRF613

MTP2N18

MTP2N20

Maximum Ratings

Symbol

Characteristic

Ratings

IRF610/612

MTP2N20

Rating

MTP2N18

Rating

IRF611/613

Unit

VDSS

Drain to Source Voltage1

200

180

150

V

VDGR

Drain to Gate Voltage1

RGS=20kΩ

200

180

150

V

VGS

Gate to Source Voltage

±20

V

TJ, Tstg

Operating Junction and Storage Temperature

-55 to +150

℃

TL

Maximum Lead Temperature for Soldering

Purposes, 1/8” From Case for 5S

275

℃

Maximum On-State Characteristics

IRF610/611

MTP2M18/20

IRF612/613

RDS(on)

Static Drain-to-Source

On Resistance

1.5

1.8

2.4

Ω

ID

Drain Current

Continuous at Tc=25℃

Continuous at Tc=100℃

Pulsed

2.5

1.5

10

3.25

2.25

9.0

2.0

1.25

8.0

A

Maximum Thermal Characteristics

R ӨJC

Thermal Resistance

Junction to Case

6.4

2.5

6.4

℃

/W

R ӨJA

Thermal Resistance,

Junction to Ambient

80

℃

/W

PD

Total Power Dissipation

At Tc=25℃

20

50

20

W

Notes

For information concerning connection diagram and package outline, refer to

Section 7.

Аналогичный номер детали - MTP2N20

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MTP2N20	176Kb / 5P	POWER FIELD EFFECT TRANSISTOR, N-CHANNEL ENHANCEMENT-MODE SILICON GATE
New Jersey Semi-Conduct...	MTP2N20	113Kb / 3P	N-Channel Power MOSFETs 3.5 A, 150-200 V
New Jersey Semi-Conduct...	MTP2N20	113Kb / 3P	N-Channel Power MOSFETs 3.5 A, 150-200 V
Inchange Semiconductor ...	MTP2N20	301Kb / 2P	isc N-Channel MOSFET Transistor

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Аналогичное описание - MTP2N20

производитель	номер детали	датащи	подробное описание детали
Samsung semiconductor	IRF130	211Kb / 5P	N-CHANNEL POWER MOSFETS
	IRF140	211Kb / 5P	N-CHANNEL POWER MOSFETS
	IRF530	354Kb / 6P	N-CHANNEL POWER MOSFETS
	IRFP250	518Kb / 7P	N-Channel Power Mosfets
	SSH5N90	264Kb / 5P	N-CHANNEL POWER MOSFETS
	SSS7N60	280Kb / 5P	N-CHANNEL POWER MOSFETS
	IRFZ45	197Kb / 5P	N-CHANNEL POWER MOSFETS
New Jersey Semi-Conduct...	IRF440	137Kb / 3P	N-CHANNEL POWER MOSFETS
New Jersey Semi-Conduct...	2N6769	89Kb / 2P	N-Channel Power MOSFETs,
ARTSCHIP ELECTRONICS CO...	IRF340	345Kb / 5P	N-Channel Power MOSFETs

More results

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Аналогичный номер детали - MTP2N20

Аналогичное описание - MTP2N20

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