IRL510-513

N-Channel Power Mosfets

www.artschip.com

1

Description

The devices are n-channel, enhancement mode, power

MOSFETs designed especially for high speed applications,

such as switching power supplies, converters, AC and DC

motor controls, relay and solenoid drivers and other pulse

circuits.

Sillcon Gate for Fast Switching Speeds

Rugged

Low Drive Requirements

Ease of Parallelling

TO-220AB

IRF510

IRF511

IRF512

IRF513

MTP4N08

MTP4N10

Maximum Ratings

Symbol

Characteristic

Rating

IRF510/512

MTP4N10

Rating

MTP4N08

Rating

IRF511/513

Unit

Drain to Source Voltage 1

100

80

60

V

Drain to Gate Voltage 1

100

80

60

V

Gate to Source Voltage

±20

±20

±20

V

TJ, Tstg

Operating Junction and Storage

Temperatures

-55 to +150

-55 to +150

-55 to +150

℃

TL

Maximum Lead Temperature

for Soldering Purposes,

1/8” From Case for 5s

275

275

275

℃

Maximum On-State Characteristics

IRF510/511

IRF512/513

MTP4N08/10

Static Drain-to-Source

On Resistance

0.60

0.80

0.80

Ω

Drain Current

Continuous at Tc=25℃

Continuous at Tc=100℃

Pulsed

4.0

2.5

16

3.5

2.0

14

5.0

3.5

14

A

Maximum Thermal Characteristics

Thermal Resistance

Junction to Case

6.4

6.4

2.5

℃

/W

Thermal Resistance

Junction to Ambient

80

80

80

℃

/W

Total Power Dissipation

at Tc=25℃

20

20

50

W

Notes

For information concerning connection dregram and package outline, refer to

Section 7.