IRF640, RF1S640,RF1S640SM

18A, 200V, 0.180 Ohm, N-Channel Power Mosfets

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1

These are N-Channel enhansement mode silicon gate power

field effect transistors. They are advance power MOSFETs

designed, tested, and guaranteed to withstancd a specified

level of energy in the breakdown avalanche mode of

operation. All of these power MOSFETs are designed for

applications

such

as

switching

regulators,

switching

convertors, motor drivers, relay drivers, and drivers for high

power bipolar switching transistors requiring high speed and

low gate drive power. These types can be operated directly

from integrated circuits.

Formerly developmental type TA17422.

Ordering Information

PART NUMBER

PACKAGE

BRAND

IRF640

TO-220AB

IRF640

RF1S640

TO-262AA

RF1S640

RF1S640SM

TO-263AB

RF1S640

NOTE:

When ordering, use the entire part number. Add the

suffix 9A to obtain the TO-263AB variant in the tape and reel,

i.e., RF1S640SM9A.

Features

18A, 200V

Single Pulse Avalanche Energy Rated

SOA is Power Dissipation Limited

Nanosecond Switching Speed

Linear Transfer Characteristics

High Input Impedance

Related Literature

-TB334 “Guidelines for Soldering Surface Mount Components

PC Boards”

Symbol

Packaging

TO-220AB

TO-263AB

TO-262AA

Absolute Maximum Ratings

Tc=25℃, Unless Otherwise Specified

IRF640, RF1S640,RF1S640SM

UNITS

200

V

200

V

18

A

11

A

72

A

±20

V

125

W

Dissipation Derating Factor………………………………………

1.0

W/℃

580

mJ

-55 to 150

℃

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Cases for 10s………………..TL

300

℃

Package Body for 10s, See TB334……………………………Tpkg

260

℃

CAUTION:

Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a

stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of

this specification is not implied.

NOTE:

1.

TJ=25℃ to 125℃.