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IRF820 датащи(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

номер детали IRF820
подробное описание детали  N-Channel Power MOSFETs
PDF  5 Pages
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производитель  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
домашняя страница  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF820 датащи(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

  IRF820 Datasheet HTML 1Page - ARTSCHIP ELECTRONICS CO.,LMITED. IRF820 Datasheet HTML 2Page - ARTSCHIP ELECTRONICS CO.,LMITED. IRF820 Datasheet HTML 3Page - ARTSCHIP ELECTRONICS CO.,LMITED. IRF820 Datasheet HTML 4Page - ARTSCHIP ELECTRONICS CO.,LMITED. IRF820 Datasheet HTML 5Page - ARTSCHIP ELECTRONICS CO.,LMITED.  
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IRF420-423/IRF820-823
MTP2N45/2N50
N-Channel Power MOSFETs
3.0A, 450V/500V
www.artschip.com
2
Maximum Ratings
Symbol
Characteristic
Rating
IRF420/422
IRF820/822
MTP2N50
Rating
IRF421/423
IRF821/823
MTP2N45
Unit
VDSS
Drain to Source Voltage 1
500
450
V
VDGR
Drain to Gate Voltage 1
RGS=20kΩ
500
450
V
VGS
Gate to Source Voltage
±20
±20
V
TJ, Tstg
Operating Junction and
Storage Temperatures
-55 to +150
-55 to +150
℃
TL
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5s
275
275
℃
Maximum Thermal Characteristics
IRF420-423/
IRF820-823
MTP2N45/2N50
RӨJC
Thermal Resistance,
Junction to Case
3.12
1.67
℃
/W
RӨJA
Thermal Resistance,
Junction to Ambient
30/80
80
℃
/W
PD
Total Power Dissipation
at Tc=25℃
40
75
W
IDM
Pulsed Drain Current
2
10
10
A
Electrical Characteristics
(Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
Test Conditions
Off Characteristics
500
V(BR)DSS
Drain Source Breakdown Voltage
1
IRF420/422/820/822
MTP2N50
IRF421/423/821/823/
MTP2N45
450
V
VGS=0V, ID=250µA
250
µA
VDS=Rated VDSS, VGS=0V
IDSS
Zero Gate Voltage Drain Current
1000
µA
VDS=0.8 x Rated VDSS,
VGS=0V, Tc=125℃
±100
IGSS
Gate-Body Leakage Current
IRF420-423
IRF820-823/MTP2N45/50
±500
nA
VGS=±20V, VDS=0V



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