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IRF720 датащи(PDF) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

номер детали IRF720
подробное описание детали  N-Channel Power MOSFETs
PDF  6 Pages
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производитель  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
домашняя страница  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

IRF720 датащи(HTML) 3 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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IRF320-323/IRF720-723/MTP3N35/3N40 T-39-11
N-Channel Power MOSFETs, 3.0A, 350-400V
www.artschip.com
3
Electrical Characteristics
(Cont.) (Tc=25℃ unless otherwise noted)
Symbol
Characteristic
Min
Max
Unit
Test Conditions
On Characteristics
2.0
4.0
VGS(th)
Gate Threshold Voltage
IRF320-323/IRF720-723
MTP3N35/40
2.0
4.5
V
ID=250µA, VDS=VGS
ID=1mA, VDS=VGS
1.8
2.5
RDS(on)
Static Drain-Source On-Resistance
2
IRF320/321/720/721
IRF322/323/722/723
MTP3N35/40
3.3
Ω
VGS=10V, ID=1.5A
12
V
VGS=10V; ID=3.0A;
VDS(on)
Drain-Source On-Voltage
2
MTP3N35/40
10
V
VGS=10V; ID=1.5A;
Tc=100℃
gfs
Forward Transconductance
1.0
S( )
VDS=10V, ID=1.5A
Dynamic Characteristics
Ciss
Input Capacitance
500
pF
Coss
Output Capacitance
100
pF
Crss
Reverse Transfer Capacitance
40
pF
VDS=25V, VGS=0V
f=1.0MHz
Switching Characteristics
(Tc=200℃, Figures 1,2)
3
td(on)
Turn-On Delay Time
40
ns
tr
Rise Time
50
ns
td(off)
Turn-Off Delay Time
100
ns
tf
Fall Time
50
ns
VDD=200V, ID=1.5A
VGS=10V, RGEN=50 Ω
RGS=50 Ω
Qg
Total Gate Charge
15
nC
VGS=10V, ID=4.0A
VDD=200V
Symbol
Characteristic
Typ
Max
Unit
Test Conditions
Source-Drain Diode Characteristics
1.6
V
Is=3.0A; VGS=0V
VSD
Diode Forward Voltage
IRF320/321/720/721
IRF322/323/722/723
1.5
V
Is=2.5A; VGS=0V
trr
Reverse Recovery Time
450
ns
IF=3.0A;
dIs/dt=100A/µS
Notes
1.
TJ=+25℃ to +150℃
2.
Pulse test: Pulse width ≤ 60µs, Duty cycle ≤ 1%
3.
Switching time measurements performed on LEM TR-58 test equipment.



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