Transistors

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2

MOSFET

SMD Type

Dual MOSFET (N and P Channel)

APM2701

Electrical Characteristics (Ta = 25

unless otherwise noted)

Parameter

Symbol

Test Conditions

Type

Min

Typ

Max

Unit

N-Ch

20

P-Ch

-20

1

30

-1

-30

±10V

N-Ch

±100

±10V

P-Ch

±100

A

N-Ch

0.45

1

A

P-Ch -0.45

-1

70

110

190

235

N-Ch

270

N-Channel:

P-Ch

300

N-Ch

70

P-Channel:

P-Ch

50

N-Ch

50

P-Ch

30

N-Ch

5

6.5

N-Channel:

P-Ch

4

6

N-Ch

0.5

P-Channel:

P-Ch

0.6

N-Ch

1.6

P-Ch

1

N-Ch

6

12

N-Channel:

P-Ch

6

10

5

10

P-Ch

8

12

P-Channel:

N-Ch

12

23

10

15

N-Ch

6

12

P-Ch

5

10

N-Ch

1.3

P-Ch

-1.3

V

Notes: a: Guaranteed by design, not subject to production testing.

b: Pulse test; pulse width

300 s, duty cycle

2%.

Reverse Transfer Capacitance

Turn-On DelayTime

Turn-Off Fall Time

Total Gate Charge

Gate Source Charge

Gate Drain Charge

Input Capacitance

Output Capacitance

Gate Threshold Voltage

V

N-Ch

Static Drain-Source On-Resistance

m

P-Ch

Drain-Source Breakdown Voltage

V

Gate-Body Leakage Current

nA

Zero Gate Voltage Drain Current

A

N-Ch

pF

nC

a

a

a

ns

Turn-On Rise Time

Turn-Off DelayTime

P-Ch

Diode Forward Voltage

b