EMF30N02JS datasheet(3/5 Pages) EXCELLIANCE

номер детали	EMF30N02JS

подробное описание детали	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

Scroll/Zoom	100%

производитель	EXCELLIANCE [Excelliance MOS Corp.]

домашняя страница	http://www.excelliancemos.com/

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3 / 5 page

2015/9/22

p.3

EMF30N02JS

T = 25°C

V ‐ Gate‐Source Voltage( V )

2.5

0.30

0.15

0.45

0.5

1.0

1.5

2.0

0.90

0.60

0.75

1.05

T = 125°C

3.5

3.0

4.0

4.5

5.0

I = 2A

On‐Resistance Variation with Gate‐Source Voltage

TYPICAL CHARACTERISTICS

0.8

1.2

1.0

1.5

1.4

0.7

-50

-25

100

125

150

TJ, Junction Temperature( °C )

ID= 5A

VGS= 4.5V

On‐Resistance Variation with Temperature

0.9

1.1

1.3

0.01

0.001

0.0001

00.2

0.4

0.6

0.8

1.2

VSD, Body Diode Forward Voltage( V )

Body Diode Forward Voltage Variation

with Source Current and Temperature

VGS= 0V

TJ= 125°C

25°C

-55°C

0.1

100

2.5

1.5

0.5

VGS, Gate to Source Voltage( V )

VDS= 5V

TA= -55°C

125°C

25°C

Transfer Characteristics

0.5

1.5

VGS = 4.5V

3.0V

2.5V

VDS, Drain‐Source Voltage( V )

On‐Region Characteristics

12.5

2.5V

1.8V

2.0

1.8

1.6

1.4

1.2

1.0

0.8

812

2.5V

3.0V

3.5V

4.0V

4.5V

ID, Drain Current( A )

On‐Resistance Variation with

Drain Current and Gate Voltage

VGS = 1.8V

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