AF6930N

N-Channel Enhancement Mode Power MOSFET

Anachip Corp.

www.anachip.com.tw

Rev. 1.2 Sep 5, 2005

2/5

Absolute Maximum Ratings

Symbol

Parameter

Rating

Units

Drain-Source Voltage

30

V

Gate-Source Voltage

±20

V

5

4

A

20

A

Total Power Dissipation

2

W

Linear Derating Factor

0.016

W/ºC

Storage Temperature Range

-55 to 150

ºC

Operating Junction Temperature Range

-55 to 150

ºC

Thermal Data

Symbol

Parameter

Maximum

Units

Rthj-amb

Max.

62.5

ºC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Units

30

-

-

V

Breakdown Voltage Temperature

Coefficient

Reference to 25

-

0.037

-

V/

-

-

50

Static Drain-Source

-

-

80

mΩ

Gate Threshold Voltage

1

-

3

V

Forward Transconductance

-

6

-

S

Drain-Source Leakage Current

-

-

1

Drain-Source Leakage Current

-

-

25

uA

Gate-Source Leakage

-

-

±100

nA

-

6.1

-

Gate-Source Charge

-

1.4

-

Gate-Drain (“Miller”) Charge

-

3.3

-

nC

-

6.7

-

Rise Time

-

6.4

-

Turn-Off Delay Time

-

22.1

-

Fall-Time

-

2.1

-

ns

Input Capacitance

-

240

-

Output Capacitance

-

145

-

Reverse Transfer Capacitance

f=1.0MHz

-

55

-

pF

Source-Drain Diode

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Continuous Source Current

(Body Diode)

-

-

1.67

V

-

-

1.2

V

Note 1: Surface mounted on 1 in

Note 2: Pulse width limited by Max. junction temperature.

Note 3: Pulse width ≤ 300us, duty cycle ≤ 2%.