WNM2016 datasheet(4/4 Pages) KEXIN

номер детали	WNM2016

подробное описание детали	N-Channel MOSFET

PDF	4 Pages

Scroll/Zoom	100%

производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

домашняя страница	http://www.kexin.com.cn/index.asp

Logo

4 / 4 page

Transistors

www.kexin.com.cn

MOSFET

SMD Type

N-Channel MOSFET

WNM2016

Capacitance

Single Pulse Power

Source to Drain Diode Forward Voltage

Safe Operating Area

150

300

450

600

GS=0V

F=1MHz

DS-Drain-to-source Voltage(V)

Ciss

Coss

Crss

Transient Thermal Response

0.3

0.4

0.5

0.6

0.7

0.8

0.0

0.5

1.0

1.5

2.0

SD-source-to-Drain Voltage(V)

0.01

0.1

100

1000

Time (s)

TA = 25 °C

V DS - Drain-to-Source Voltage (V)

0.1

TA = 25 °C

Single Pulse

1 ms

10 ms

100 ms

0.01

100 s, DC

BVDSS Limited

100

100 µs

Limited by RDS(on)*

1 s

10 s

0.0001

0.001

0.01

0.1

100

300

0.001

0.002

0.005

0.01

0.02

0.05

0.1

0.2

0.5

t , TIME (sec)

(t) = r(t) * R

= 270 °C/W

Duty Cycle, D = t /t

1 2

T - T = P * R

(t)

P(pk)

t 2

Single Pulse

D = 0.5

0.1

0.05

0.02

0.01

0.2

10 -3

10 -2

1000

10 -1

10 -4

100

0.2

0.1

0.05

Square Wave Pulse Duration (s)

0.1

0.01

Single Pulse

Notes:

P DM

1. Duty Cycle, D =

2. Per Unit Base = R thJA = 70 °C/W

3. TJM - TA = P DM ZthJA(t)

4. Surface Mounted

Duty Cycle = 0.5

0.02

WNM2016 датащи(PDF) 4 Page - Guangdong Kexin Industrial Co.,Ltd

WNM2016 датащи(HTML) 4 Page - Guangdong Kexin Industrial Co.,Ltd

Html Pages

1 2 3 4

датащи скачать

ссылки URL