TPCP8404 datasheet(1/10 Pages) KEXIN

номер детали	TPCP8404

подробное описание детали	Silicon P,N Channel MOSFET

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производитель	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

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MOSFET

SMD Type

Silicon P,N Channel MOSFET

TPCP8404

Features

Low drain-source ON-resistance:

P Channel RDS(ON) = 38m (typ.)(VGS=-10V)

N Channel RDS(ON) = 38m (typ.)(VGS=10V)

High forward transfer admittance:

P Channel |Yfs| = 7.3S (typ.)

N Channel |Yfs| = 8S (typ.)

Low leakage current:

P Channel IDSS = -10 A(max)(VDS=-30V)

N Channel IDSS = 10 A(max)(VDS=30V)

Enhancement mode:

P Channel Vth = -0.8 to -2.0 V (VDS = -10V, ID = -1mA)

N Channel Vth = 1.3 to 2.5 V (VDS = 10V, ID = 1mA)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

30

V

Drain-gate voltage (RGS = 20 k )VDGR

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

44

Drain

current

Pulse

(Note 1)

IDP

16

A

Single-device operation

(Note 3a)

PD(1)

1.48

Drain power

dissipation

(t

= 5 s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

PD(2)

1.23

Single-device operation

(Note 3a)

PD(1)

0.58

Drain power

dissipation

(t

= 5 s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

PD(2)

0.36

W

Single pulse avalanche energy

(Note 4)

EAS

2.6

mJ

Avalanche current

IAR

22

A

Repetitive avalanche energy

Single-device value at dual operation

)

5

,

b

3

,

a

2

e

t

o

N

(

EAR

0.009

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

55 to 150

°C

Note: For Notes 1 to 5, refer to the next page.

Absolute Maximum Ratings Ta = 25

Circuit Configuration

Marking (Note 6)

8

7

6

5

1

2

3

4

8404

1

2

3

4

8

7

6

5

Lot No.

Unit: mm

2-3V1G

5

Drain2

6

Drain2

7

Drain1

8

Drain1

1

Source1

2

Gate1

3

Source2

4

Gate2

0.33±0.05

0.28+0.1

-0.11

1.12+0.13

-0.12

0.475

0.65

A

0.05 M

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

0.05 M

A

S

0.025

S

1.12+0.13

-0.12

0.28+0.1

-0.11

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