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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ISCN70D датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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ISCN70D датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  1 isc website：www.iscsemi.com isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ISCN70D FEATURES · Collector–Emitter Sustaining Voltage- : VCEO = 250 V(Min) · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATON · Be designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video Band of high-resolution monitor TVs to 50MHz. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 0.1 A PC Collector Power Dissipation TC=25℃ 10 W Ti Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - ISCN70D |
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Аналогичное описание - ISCN70D |
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