EMD06N60CS datasheet(2/5 Pages) EXCELLIANCE

номер детали	EMD06N60CS

подробное описание детали	N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

PDF	5 Pages

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производитель	EXCELLIANCE [Excelliance MOS Corp.]

домашняя страница	http://www.excelliancemos.com/

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2 / 5 page

2013/10/22

p.2

EMD06N60CS

ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)

PARAMETER

SYMBOL

TEST CONDITIONS

LIMITS

UNIT

MIN TYP

MAX

STATIC

Drain‐Source Breakdown Voltage

V(BR)DSS

VGS = 0V, ID = 250A

600

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250A

Gate‐Body Leakage

IGSS

VDS = 0V, VGS = ±30V

±100

Zero Gate Voltage Drain Current

IDSS

VDS = 600V, VGS = 0V

A

VDS = 480V, VGS = 0V, TJ = 125 °C

Drain‐Source On‐State Resistance

RDS(ON)

VGS = 10V, ID = 3A

1.4

1.55

Forward Transconductance

gfs

VDS = 25V, ID = 3A

DYNAMIC

Input Capacitance

Ciss

VGS = 0V, VDS = 25V, f = 1MHz

660

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

3.5

Total Gate Charge

1,2

VDS = 300V, VGS = 15V,

ID = 3A

11.5

Gate‐Source Charge

1,2

Qgs

2.9

Gate‐Drain Charge

1,2

Qgd

3.1

Turn‐On Delay Time

1,2

td(on)

Rise Time

1,2

VDS = 300V,

Turn‐Off Delay Time

1,2

td(off)

ID = 3A, VGS = 15V, RGS = 10Ω

Fall Time

1,2

SOURCE‐DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current

ISM

Forward Voltage

VSD

IF = IS, VGS = 0V

1.5

Reverse Recovery Time

trr

IF = IS, dlF/dt = 100A / S

0.8

S

Reverse Recovery Charge

Qrr

3.6

1Pulse test : Pulse Width  300 sec, Duty Cycle  2％.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

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