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DAM2W600G датащи(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
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DAM2W600G датащи(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD. |
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2 / 4 page ![]() Electrical Characteristics @ TJ =25°C (unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit OFF Characteristics Drain-Source Breakdown Voltage BVDSS VGS=0V IDS=250uA 600 - - V Zero Gate Voltage Drain Current IDSS VGS=0V VDS=600V - - 1 uA Gate-Body Leakage IGSS VGS=±30V VDS=0V - - ±100 nA ON Characteristics Gate Threshold Voltage VTH VDS=VGS IDS=250uA 3 4 5 V Static Drain-Source On-Resistance RDS(on) VGS=10V IDS=1A - 4.3 5 Ω Dynamic Characteristics Input Capacitance Ciss VDS=25V VGS=0V Freq.=1MHz - 425 620 pF Output Capacitance Coss - 26 40 Reverse Transfer Capacitance Crss - 3.2 7 Switching Characteristics Turn-On Delay Time Td(on) VDD=300V VGS=10V RG =25Ω IDS=1A - 16.6 32 ns Rise Time Tr - 6.8 13 Turn-Off Delay Time Td(off) - 23.1 44 Fall Time Tf - 17 33 Total Gate Charge Qg VDS=480V VGS=10V IDS=1A - 9.9 15 nC Gate to Source Charge Qgs - 2.9 6 Gate to Drain Charge Qgd - 3.1 6 Drain-Source Diode Characteristics Diode Forward Voltage VSD VGS=0V IS=1A - - 1 V Notes: 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 2. VDD=50V,VGS=10V,L=10mH,IAS=3.6A. RG=25Ω, Starting TJ=25°C 3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air. Apr.2018 DAM2W600G |
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