DAM80N30D datasheet(2/4 Pages) DACO

2 / 4 page

Electrical Characteristics @ TJ =25°C (unless otherwise specified)

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

OFF Characteristics

Drain-Source Breakdown Voltage

BVDSS

VGS=0V

IDS=250uA

Zero Gate Voltage Drain Current

IDSS

VGS=0V

VDS=30V

Gate-Body Leakage

IGSS

VGS=±20V

VDS=0V

±100

ON Characteristics

Gate Threshold Voltage

VTH

VDS=VGS

IDS=250uA

1.6

2.5

Static Drain-Source On-Resistance

RDS(on)

VGS=10V

IDS=20A

4.8

mΩ

Dynamic Characteristics

Input Capacitance

Ciss

VDS=25V

VGS=0V

Freq.=1MHz

1160

Output Capacitance

Coss

200

Reverse Transfer Capacitance

Crss

180

Switching Characteristics

Turn-On Delay Time

Td(on)

VDD=15V

VGS=10V

RG =

3.3Ω

IDS=15A

7.5

Rise Time

14.5

Turn-Off Delay Time

Td(off)

35.2

Fall Time

9.6

Total Gate Charge

VDS=15V

VGS=4.5V

IDS=20A

11.1

Gate to Source Charge

Qgs

1.85

Gate to Drain Charge

Qgd

6.8

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

VGS=0V

IS=1A

Notes:

1.Pulse Test: Pulse Width

300 s, Duty Cycle

2%.

2. VDD=25V,VGS=10V,L=0.1mH,IAS=42A.,RG=

25Ω, Starting TJ=25°C

3. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

R JC is guaranteed by design while R CA is determined by the user's board design. R JA shown below for single device operation on FR-4 in still air.

Aug.2017

DAM80N30D

DAM80N30D датащи(PDF) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

DAM80N30D датащи(HTML) 2 Page - DACO SEMICONDUCTOR CO.,LTD.

Html Pages

1 2 3 4

датащи скачать

ссылки URL