LM3310 datasheet(6/25 Pages) NSC

6 / 25 page

Electrical Characteristics V

IN =2.5V and IL =0A (Continued)

Specifications in standard type face are for T

J = 25˚C and those with boldface type apply over the full Operating Tempera-

ture Range (T

J = −40˚C to +125˚C). Unless otherwise specified, VIN =2.5V and IL = 0A.

Symbol

Parameter

Conditions

Min(Note 5) Typ(Note 6) Max(Note 5)

Units

FREQ

FREQ Pin Current

FREQ = V

IN = 2.5V

2.7

13.5

µA

Electrical Characteristics V

IN =2.5V and AVIN =8V

Specifications in standard type face are for T

J = 25˚C and those with boldface type apply over the full Operating Tempera-

ture Range (T

J = −40˚C to +125˚C). Unless otherwise specified VIN =2.5V and AVIN = 8V.

Operational Amplifier

Symbol

Parameter

Conditions

Min(Note 5) Typ(Note 6) Max(Note 5)

Units

Input Offset Voltage

Buffer configuration, V

O =

IN/2, no load

5.7

Input Bias Current (POS Pin) Buffer configuration, V

O =

IN/2, no load (Note 9)

200

550

OUT Swing

Buffer, R

L=2k

Ω,V

O min.

0.001

0.03

Buffer, R

L=2k

Ω,V

O max.

7.9

7.97

Supply Voltage

412

Is+

Supply Current

Buffer, V

O =AVIN/2, No Load

1.5

7.8

OUT

Output Current

Source

138

195

Sink

105

135

175

Electrical Characteristics V

IN =2.5V

Specifications in standard type face are for T

J = 25˚C and those with boldface type apply over the full Operating Tempera-

ture Range (T

J = −40˚C to +125˚C). Unless otherwise specified VIN =2.5V.

Gate Pulse Modulation

Symbol

Parameter

Conditions

Min(Note 5) Typ(Note 6) Max(Note 5)

Units

VFLK

VFLK Voltage Levels

Rising edge threshold

1.4

Falling edge threshold

0.4

VDPM

VDPM Voltage Levels

Rising edge threshold

1.4

Falling edge threshold

0.4

DD(TH)

DD Threshold

VGHM = 30V

2.8

3.3

VGHM = 5V

0.4

0.5

0.7

VFLK

VFLK Current

VFLK = 1.5V

4.8

µA

VFLK = 0.3V

1.1

2.5

VDPM

VDPM Current

VDPM = 1.5V

4.8

µA

VDPM = 0.3V

1.1

2.5

VGH

VGH Bias Current

VGH = 30V, VFLK High

300

µA

VGH = 30V, VFLK Low

35.5

VGH-VGHM

VGH to VGHM Resistance

20mA Current, VGH = 30V

28.5

Ω

VGHM-RE

VGHM to RE Resistance

20mA Current, VGH = VGHM

= 30V

VGHM(OFF)

VGH Resistance

VDPM is Low, VGHM = 2V

1.2

1.7

Ω

CE Current

CE = 0V

µA

CE(TH)

CE Voltage Threshold

1.16

1.22

1.34

Note 1: Absolute maximum ratings are limits beyond which damage to the device may occur. Operating Ratings are conditions for which the device is intended to

be functional, but device parameter specifications may not be guaranteed. For guaranteed specifications and test conditions, see the Electrical Characteristics.

Note 2: Under normal operation the VC and CE pins may go to voltages above this value. The maximum rating is for the possibility of a voltage being applied to

the pin, however the VC and CE pins should never have a voltage directly applied to them.

Note 3: The maximum allowable power dissipation is a function of the maximum junction temperature, TJ(MAX), the junction-to-ambient thermal resistance, θJA,

and the ambient temperature, TA. See the Electrical Characteristics table for the thermal resistance of various layouts. The maximum allowable power dissipation

at any ambient temperature is calculated using: PD (MAX) = (TJ(MAX) −TA)/θJA. Exceeding the maximum allowable power dissipation will cause excessive die

temperature, and the regulator will go into thermal shutdown.

Note 4: The human body model is a 100pF capacitor discharged through a 1.5k

Ω resistor into each pin per JEDEC standard JESD22-A114.

LM3310 датащи(PDF) 6 Page - National Semiconductor (TI)

LM3310 датащи(HTML) 6 Page - National Semiconductor (TI)

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25

датащи скачать

ссылки URL