2SC5894 datasheet(1/10 Pages) RENESAS

номер детали	2SC5894

подробное описание детали	Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

PDF	10 Pages

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производитель	RENESAS [Renesas Technology Corp]

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1 / 10 page

Rev.2.00 Aug 10, 2005 page 1 of 9

2SC5894

Silicon NPN Epitaxial

High Frequency Low Noise Amplifier / Oscillator

REJ03G0764-0200

(Previous ADE-208-1605A)

Rev.2.00

Aug.10.2005

Features

• High gain bandwidth product

fT = 20 GHz typ.

• High power gain and low noise figure;

PG = 17.5 dB typ., NF = 1.8 dB typ. at f = 1.8 GHz

Outline

RENESAS Package code: PTSP0004ZA-A

(Package name: CMPAK-4)

1. Emitter

2. Collector

3. Emitter

4. Base

1

4

3

2

Note: Marking is “WJ–“.

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

12

V

Collector to emitter voltage

VCEO

4.0

V

Emitter to base voltage

VEBO

1.5

V

Collector current

IC

12

mA

Collector power dissipation

Pc

50

mW

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Аналогичный номер детали - 2SC5894

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Renesas Technology Corp	2SC5890	169Kb / 16P	Silicon NPN Epitaxial UHF / VHF wide band amplifier
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Аналогичное описание - 2SC5894

производитель	номер детали	датащи	подробное описание детали
Hitachi Semiconductor	2SC5594	53Kb / 8P	Silicon NPN Epitaxial High Frequency Low Noise Amplifier
Hitachi Semiconductor	2SC5624	105Kb / 8P	Silicon NPN Epitaxial High Frequency Low Noise Amplifier
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Renesas Technology Corp	2SC5975	238Kb / 18P	SILICON NPN EPITAXIAL HIGH FREQUENCY LOW NOISE AMPLIFIER / OSCILLATOR
Hitachi Semiconductor	2SC5629	73Kb / 10P	Silicon NPN Epitaxial High Frequency Amplifier / Oscillator
Renesas Technology Corp	2SC5594	89Kb / 8P	Silicon NPN Epitaxial High Frequency Low Noise Amplifier
	2SC5624	198Kb / 7P	Silicon NPN Epitaxial High Frequency Low Noise Amplifier
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	2SC5593	176Kb / 10P	Silicon NPN Epitaxial High Frequency Low Noise Amplifier
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