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APM4953 датащи(PDF) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

номер детали APM4953
подробное описание детали  Dual P-Channel Enhancement Mode Mosfet
PDF  7 Pages
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производитель  ARTSCHIP [ARTSCHIP ELECTRONICS CO.,LMITED.]
домашняя страница  http://www.artschip.com/
Logo ARTSCHIP - ARTSCHIP ELECTRONICS CO.,LMITED.

APM4953 датащи(HTML) 2 Page - ARTSCHIP ELECTRONICS CO.,LMITED.

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APM4953
Dual P-Channel Enhancement Mode Mosfet
www.artschip.com
2
Electrical Characteristics (TA=25℃ unless otherwise noted)
APM4953
Symbol
Parameter
Test Condition
Min.
Typa.
Max
Unit
Static
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, IDS=-250µA
-30
V
IDSS
Zero Gate Voltage Drain Current
VDS=-24V, VGS=0V
-1
µA
VGS(th)
Gate Threshold Voltage
VGS=VGS, IDS=-250µA
-1
-1.5
-2
V
IGSS
Gate Leakage Current
VGS=±25V, VDS=0V
±100
nA
VGS=-10V, IDS=-4.9A
53
60
RDS(ON)
Drain-Source On-state
Resistance
b
VGS=-4.5V, IDS=-3.6A
80
95
mΩ
VSD
Diode Forward Voltage b
ISD=-1.7A, VGS=0V
-0.7
-1.3
V
Dynamic
a
Qg
Total Gate Charge
22.3
29
Qgs
Gate-Source Charge
4.65
Qgd
Gate-Drain Charge
VDS=-15V, IGS=-10V
ID=-4.6A
2
nC
td(on)
Turn-on Delay Time
10
18
Tr
Turn-on Rise Time
15
20
td(OFF)
Turn-off Delay Time
22
38
Tf
Turn-off Fall Time
VDD=-15V, ID=-2A,
VGEN=-10V, RG=6Ω
RL=7.5Ω
15
25
ns
Ciss
Input Capacitance
1260
Coss
Output Capacitance
340
Crss
Reverse Transfer Capacitance
VGS=0V
VDS=-25V
Frequency=1.0MHz
220
pF
Notes
a: Pulse test; pulse width ≤300µs, duty cycle ≤2%
b: Guaranteed by design, not subject to production testing



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