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AM29DL320G датащи(PDF) 28 Page - SPANSION |
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AM29DL320G датащи(HTML) 28 Page - SPANSION |
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28 / 58 page ![]() 26 Am29DL320G September 27, 2004 V HH on the WP#/ACC pin, the device automatically en- ters the Unlock Bypass mode. The system may then write the two-cycle Unlock Bypass program command sequence. The device uses the higher voltage on the WP#/ACC pin to accelerate the operation. Note that the WP#/ACC pin must not be at V HH any operation other than accelerated programming, or device dam- age may result. In addition, the WP#/ACC pin must not be left floating or unconnected; inconsistent behavior of the device may result. Figure 4 illustrates the algorithm for the program oper- ation. Refer to the Erase and Program Operations table in the AC Characteristics section for parameters, and Figure 18 for timing diagrams. Figure 4. Program Operation Chip Erase Command Sequence Chip erase is a six bus cycle operation. The chip erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two additional unlock write cycles are then followed by the chip erase command, which in turn invokes the Embedded Erase algorithm. The device does not require the system to preprogram prior to erase. The Embedded Erase algo- rithm automatically preprograms and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any con- trols or timings during these operations. Table 13 shows the address and data requirements for the chip erase command sequence. When the Embedded Erase algorithm is complete, that bank returns to the read mode and addresses are no longer latched. The system can determine the sta- tus of the erase operation by using DQ7, DQ6, DQ2, or RY/BY#. Refer to the Write Operation Status sec- tion for information on these status bits. Any commands written during the chip erase operation are ignored. However, note that a hardware reset im- mediately terminates the erase operation. If that oc- curs, the chip erase command sequence should be reinitiated once that bank has returned to reading array data, to ensure data integrity. Figure 5 illustrates the algorithm for the erase opera- tion. Refer to the Erase and Program Operations ta- bles in the AC Characteristics section for parameters, and Figure 20 section for timing diagrams. Sector Erase Command Sequence Sector erase is a six bus cycle operation. The sector erase command sequence is initiated by writing two unlock cycles, followed by a set-up command. Two ad- ditional unlock cycles are written, and are then fol- lowed by the address of the sector to be erased, and the sector erase command. Table 13 shows the ad- dress and data requirements for the sector erase com- mand sequence. The device does not require the system to preprogram prior to erase. The Embedded Erase algorithm auto- matically programs and verifies the entire memory for an all zero data pattern prior to electrical erase. The system is not required to provide any controls or tim- ings during these operations. After the command sequence is written, a sector erase time-out of 50 µs occurs. During the time-out period, additional sector addresses and sector erase com- mands (for sectors within the same bank) may be writ- ten. Loading the sector erase buffer may be done in any sequence, and the number of sectors may be from one sector to all sectors. The time between these ad- ditional cycles must be less than 50 µs, otherwise era- sure may begin. Any sector erase address and command following the exceeded time-out may or may not be accepted. It is recommended that processor in- terrupts be disabled during this time to ensure all com- mands are accepted. The interrupts can be re-enabled after the last Sector Erase command is written. Any command other than Sector Erase or Erase Sus- START Write Program Command Sequence Data Poll from System Verify Data? No Yes Last Address? No Yes Programming Completed Increment Address Embedded Program algorithm in progress Note: See Table 13 for program command sequence. |
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