SPD61089-8SLASHTR datasheet(2/5 Pages) WILLSEMI

номер детали	SPD61089-8/TR

подробное описание детали	High Voltage Ringing SLIC Protector

PDF	5 Pages

Scroll/Zoom	100%

производитель	WILLSEMI [Will Semiconductor Ltd.]

домашняя страница	http://www.willsemi.com/index.php?siteid=2

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SPD61089

Will Semiconductor Ltd.

Oct, 2018 - Rev.1.5

Absolute Maximum ratings

Parameter Measurement Information

Parameter

Symbol

Value

Unit

Non-repetitive

peak on-state

pulse current

10/1000us

（

Telcordia (Bellcore) GR-1089-CORE, Issue 3）

IPPSM

5/310us

（

ITU-T K.20, K.21& K.45, K.44 open-circuit voltage wave shape 10/700 µs）

2/10us

(Telcordia (Bellcore) GR-1089-CORE, Issue 3)

120

Non repetitive

peak on-state current

(sinusoidal) 60Hz

0.1s

ITSM

6.5

4.5

2.4

30s

1.3

900s

0.72

Repetitive peak off-state voltage, VGK=0

VDRM

-170

Repetitive peak gate-cathode voltage, VKA=0

VGKRM

-167

Operating free-air temperature range

-40-85

°C

Storage temperature range

TSTG

-40-150

°C

Junction temperature

-40-150

°C

Maximum lead temperature for soldering during 10s

260

°C

Junction to free air thermal resistance

RθJA

120

°C /W

Parameter

Symbol

Off-state current

Holding current

Breakover voltage

V(BO)

Forward voltage

Peak forward recovery voltage

VFRM

Gate-cathode impulse breakover voltage

VGK(BD)

Gate reverse current

IGKS

Gate trigger current

IGT

Gate-cathode trigger voltage

VGT

Cathode-anode off-state capacitance

CKA

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