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SPD9112W датащи(PDF) 2 Page - Will Semiconductor Ltd. |
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SPD9112W датащи(HTML) 2 Page - Will Semiconductor Ltd. |
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2 / 5 page ![]() SPD9112W Will Semiconductor Ltd. 2 Revision 1.1, 2015/11/20 Absolute maximum ratings Electrical characteristics (TA = 25 oC, unless otherwise noted) Notes: 1) TLP parameter: Z0 = 50 Ω , tp = 100ns, tr = 2ns, averaging window from 60ns to 80ns. RDYN is calculated from 4A to 16A. 2) Non-repetitive current pulse, according to IEC61000-4-5. Parameter Symbol Rating Unit Peak pulse power (tp = 8/20μs) Ppk 300 W Peak pulse current (tp = 8/20μs) IPP 12 A ESD according to IEC61000-4-2 air discharge VESD ±30 kV ESD according to IEC61000-4-2 contact discharge ±30 Junction temperature TJ 125 oC Operating temperature TOP -40~85 oC Lead temperature TL 260 oC Storage temperature TSTG -55~150 oC Parameter Symbol Condition Min. Typ. Max. Unit Reverse maximum working voltage VRWM 12 V Reverse leakage current IR VRWM = 12V <1 100 nA Reverse breakdown voltage VBR IT = 1mA 13 15 17 V Clamping voltage 1) VCL IPP = 16A, tp = 100ns 23 V Dynamic resistance 1) RDYN 0.36 Ω Clamping voltage 2) VCL IPP = 1A, tp = 8/20μs 19 V IPP = 5A, tp = 8/20μs 24 V IPP = 12A, tp = 8/20μs 28 V Junction capacitance CJ VR = 0V, f = 1MHz 1.2 1.8 pF |
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